2004
S.Kamiya, J.Kuypers, A.Trautmann, P.Ruther, O.Paul, Annealing Temperature Dependent Strength of Polysilicon Measured Using a Novel Tensile Test Structure, Proc. MEMS’04, Maastricht, (2004), 185-188. M.Schuster, N.Klein, P.Ruther, A.Trautmann, O.Paul, P.Kuzel, F.Kadlec, An interconnected 2D-TM EBG structure for millimetre and sub-millim
Patents/Patent applications
P1: MICROMECHANICAL METHOD AND CORRESPONDING ASSEMBLY FOR BONDING SEMICONDUCTOR SUBSTRATES AND CORRESPONDINGLY BONDED SEMICONDUCTOR CHIP P2: CONTACT ARRANGEMENT FOR ESTABLISHING A SPACED, ELECTRICALLY CONDUCTING CONNECTION BETWEEN MICROSTRUCTURED COMPONENTS P3: COMPOSITE OF AT LEAST TWO SEMICONDUCTOR SUBSTRATE
Publications
2014
C. Banzhaf, M. Grieb, A. Trautmann, A. Bauer, L. Frey, Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures, Materials Science Forum. 778–780 (2014) 595–598. https://doi.org/10.4028/www.scientific.net/MSF.778-780.595. C.T. Banzhaf, M. Grieb, A. Trautmann, A.J. Bauer, L. Frey, Inv
Pump test bay with integrated sensor technology:
The test bench is suitable for carrying out long-term tests on up to three pumps simultaneously, especially for recording the temperatures of the pumps, the flow rates and the pressures before and after the pumps. By means of a valve it is possible to constrict the pipeline so that the flow resi
Pump test bay with integrated sensor technology:
The test bench is suitable for carrying out long-term tests on up to three pumps simultaneously, especially for recording the temperatures of the pumps, the flow rates and the pressures before and after the pumps. By means of a valve it is possible to constrict the pipeline so that the flow resi
Purchase of a heat treatment furnace for the materials science laboratory
The materials science laboratory is equipped with a notched impact hammer and a device for the Jominy face quenching test, which are basic tools in materials science education.
Particularly, bcc materials tend to have a strongly temperature-dependent strength behaviour, wh