Patente/Patentanmeldungen
P1: MICROMECHANICAL METHOD AND CORRESPONDING ASSEMBLY FOR BONDING SEMICONDUCTOR SUBSTRATES AND CORRESPONDINGLY BONDED SEMICONDUCTOR CHIP P2: CONTACT ARRANGEMENT FOR ESTABLISHING A SPACED, ELECTRICALLY CONDUCTING CONNECTION BETWEEN MICROSTRUCTURED COMPONENTS P3: COMPOSITE OF AT LEAST TWO SEMICONDUCTOR SUBSTRATES
2013
C. Banzhaf, M. Grieb, A. Trautmann, A. Bauer, L. Frey, Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures, Materials Science Forum. 740–742 (2013) 691–694. https://doi.org/10.4028/www.scientific.net/MSF.740-742.691.
2011
L. Bohne, A. Trautmann, T. Pirk, W. Jaegermann, Strukturierung von Siliziumsubstraten für
2013
C. Banzhaf, M. Grieb, A. Trautmann, A. Bauer, L. Frey, Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures, Materials Science Forum. 740–742 (2013) 691–694. https://doi.org/10.4028/www.scientific.net/MSF.740-742.691.
2011
L. Bohne, A. Trautmann, T. Pirk, W. Jaegermann, Strukturierung von Siliziumsubstraten für integrierte 3D-Dünnschichtbatterien, MikroSystemTechnik - KONGRESS (2011).
2007
S.Kamiya, J.Kuypers, A.Trautmann, P.Ruther, O.Paul, Process Temperature Dependent Mechanical Properties of Polysilicon Measured Using a Novel Tensile Test Structure, IEEE Journal of Microelectromechanical Systems 16 Issue 2, (2007), 202 – 212. B. Levey, P. Gieschke, M. Dölle, S. Spinner, A. Trautmann, P. Ruther, O. Paul, CMOS-Integrat
2004
S.Kamiya, J.Kuypers, A.Trautmann, P.Ruther, O.Paul, Annealing Temperature Dependent Strength of Polysilicon Measured Using a Novel Tensile Test Structure, Proc. MEMS’04, Maastricht, (2004), 185-188. M.Schuster, N.Klein, P.Ruther, A.Trautmann, O.Paul, P.Kuzel, F.Kadlec, An interconnected 2D-TM EBG structure for millimetre and sub-millim
